Transistorized class AB power amplifier and its bias circuit

Details Transistorized class AB power amplifier and its bias circuit Transistorized class AB power amplifier and its bias circuit

1977-04-08

1978-05-30

Dahl, Lawrence J.

Amplifiers

With semiconductor amplifying device

Including temperature compensation means

330296, 330302, H03F 132

Patent

active

040926133

ABSTRACT:
The bias circuit of the base of an HF amplifier transistor, arranged in a common-emitter configuration, comprises an LF transistor likewise in a common-emitter configuration and two resistors respectively connecting the base of the LF transistor to its collector and to a point of fixed potential. The bias voltage varies more rapidly, as a function of temperature, than the voltage across the terminals of the reference diode formed by the base-emitter junction of the LF transistor. This permits a correct temperature compensation of the HF transistor in spite of the temperature differences between the junctions of the HF and LF transistors and of the thermal inertia of the thermal link between these two transistors.

REFERENCES:
patent: 3906386 (1975-09-01), Hongu et al.

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