Transistor with superconducting collector, base, and emitter sep

Details Transistor with superconducting collector, base, and emitter sep Transistor with superconducting collector, base, and emitter sep

1989-08-23

1992-04-21

Hille, Rolf

Superconductor technology: apparatus, material, process

High temperature , per se

Having tc greater than or equal to 150 k

357 5, 357 33, 505700, 505701, 505702, H01L 3922, H01L 2900, H01B 1200

Patent

active

051068222

ABSTRACT:
A superconducting transistor comprises: a superconducting collector layer for drawing out quasiparticles from a superconducting base layer while a carrier concentration thereof is maintained at a level lower than in metal and at a high level where the superconducting property, is exhibited said superconducting collector layer being formed of predetermined component elements which are formed by a predetermined composition rate, a first barrier layer provided on the superconducting collector layer, formed of a substance having the same component elements as that of the collector layer and having different composition rate from that of the collector layer, and said first barrier layer having a low carrier concentration where the superconducting property is not exhibited, a superconducting base layer provided on the first barrier layer, formed of a substance having the same component elements as that of the superconducting collector layer, a second barrier layer provided on the superconducting base layer formed of a substance having the same component element as that of the superconducting collector layer and having different composition rate from that of the superconducting collector layer, and having a low carrier concentration where the superconducting properties is not exhibited, and a superconducting emitter layer provided on the second barrier layer, formed of a substance having the same component elements as that of the superconducting collector.

REFERENCES:
patent: 4157555 (1979-06-01), Gray
patent: 4575741 (1986-03-01), Frank
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Japanese Journal of Applied Physics, vol. 26, No. 7, part II, Jul. 1987, pp. L1211-L1213, Tokyo, JP, Y. Higashino et al., "Observation of the Josephson Effect in Y-Ba-Cu-O Compound".
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International Electron Devices Meeting 11-14th Dec. 1988, pp. 282-285, New York, U.S., A. Yoshida et al., "Monolithic Device Fabrication Using High-Tc Superconductor".

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