Transistor with strain-inducing structure in channel

Details Transistor with strain-inducing structure in channel Transistor with strain-inducing structure in channel

2006-03-28

2006-03-28

Le, Dung A. (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

C257S018000, C257S015000

Reexamination Certificate

active

07019326

ABSTRACT:
Various methods for forming a layer of strained silicon in a channel region of a device and devices constructed according to the disclosed methods. In one embodiment, a strain-inducing layer is formed, a relaxed layer is formed on the strain-inducing layer, a portion of the strain-inducing layer is removed, which allows the strain-inducing layer to relax and strain the relaxed layer.

REFERENCES:
patent: 6059895 (2000-05-01), Chu et al.
patent: 6603156 (2003-08-01), Rim
patent: 2004/0026765 (2004-02-01), Currie et al.

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