Transistor with spatially integrated schottky diode

Details Transistor with spatially integrated schottky diode Transistor with spatially integrated schottky diode

2007-05-08

2010-10-05

Laxton, Gary L (Department: 2838)

Electricity: power supply or regulation systems

Output level responsive

Using a three or more terminal semiconductive device as the...

C323S225000, C257S133000, C257S476000, C257S487000, C363S147000

Reexamination Certificate

active

07808223

ABSTRACT:
An integrated circuit device for delivering power to a load includes a composite transistor and a composite schottky diode. The composite transistor is formed by a plurality of component transistors that have commonly coupled source terminals, commonly coupled drain terminals and commonly coupled gate terminals. The composite schottky diode is formed by a plurality of component schottky diodes that have anodes coupled in common and coupled to the source terminals of the plurality of component transistors, and for which drain terminals of the commonly coupled drain terminals constitute respective cathodes.

REFERENCES:
patent: 3586930 (1971-06-01), Das et al.
patent: 5682054 (1997-10-01), Nakashima
patent: 5708619 (1998-01-01), Gillingham
patent: 5770504 (1998-06-01), Brown et al.
patent: 5955872 (1999-09-01), Grimm
patent: 6366155 (2002-04-01), Moon et al.
patent: 6429633 (2002-08-01), Kajiwara et al.
patent: 7148665 (2006-12-01), Agari et al.
patent: 7391200 (2008-06-01), Khanna et al.
patent: 2002/0053658 (2002-05-01), Okamoto et al.
patent: 2003/0080355 (2003-05-01), Shirai et al.
patent: 2006/0205168 (2006-09-01), Zuniga et al.
patent: 2007/0030061 (2007-02-01), Cho et al.
Leroux et al., “Building in Reliability With Latch-Up, ESD and Hot Carrier Effects on A 0.25 uM CMOS Technology,” Solid-State Device Research Conference, 1997. Proceeding of the 27th European, Sep. 22-24, 1997, pp. 464-467.

Affiliated with

Also associated with

Rating

Transistor with spatially integrated schottky diode does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Transistor with spatially integrated schottky diode, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Transistor with spatially integrated schottky diode will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4228447