Transistor with plural parallel units

Details Transistor with plural parallel units Transistor with plural parallel units

1980-04-07

1983-01-25

Rosenberger, R. A.

H01L 2972

Patent

active

043706703

ABSTRACT:
This invention discloses a structure of a transistor suitable for high frequency and high output power. An emitter region having a first conductivity type is formed in a base region having opposite conductivity type in contact with a collector region having the first conductivity type. Said emitter region is divided into a plurality of active emitter regions by a plurality of isolation regions having said opposite conductivity type which are formed in said emitter region and said active emitter regions are connected in parallel by an electrode such as for lead-out. The isolation regions may be used as stabilizing resistors and connected between each said active emitter region and the electrode.

REFERENCES:
patent: 3462658 (1969-08-01), Worchel et al.
patent: 3489964 (1970-01-01), Masuda
patent: 3665266 (1972-05-01), Drozdowicz et al.
patent: 3667008 (1972-05-01), Katnack
patent: 3740621 (1973-06-01), Carley
patent: 4072979 (1978-02-01), Palara

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