Transistor with overlapping gate/drain and two-layered gate stru

Details Transistor with overlapping gate/drain and two-layered gate stru Transistor with overlapping gate/drain and two-layered gate stru

1990-04-25

1991-10-01

Carroll, J.

357 6, 357 235, 357 239, 357 2314, 357 54, 357 71, H01L 4902, H01L 2904, H01L 2348

Patent

active

050538497

ABSTRACT:
Herein disclosed is a semiconductor device of high density. The semiconductor device having a high density and a microstructure is required to have a high breakdown voltage and a high speed even with a low supply voltage. The semiconductor device comprises: a semiconductor body; a gate insulating film formed over the body; and a MOS transistor having a source/drain region formed in the body and a gate electrode film formed over the gate insulating film. The gate electrode film is composed of two or more films having different etching rates. The gate etching is stopped at the interface of the composite film to form an inverse-T gate electrode structure; and in that an electric conduction is observed between the component films. Thus, the overlap between the gate and the drain can be controlled.

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