Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2006-09-19
2006-09-19
Le, Toan (Department: 2824)
Static information storage and retrieval
Floating gate
Particular biasing
C365S185260, C438S257000, C438S261000, C438S264000, C977S723000, C977S763000
Reexamination Certificate
active
07110299
ABSTRACT:
A memory is described which has memory cells that store data using hot electron injection. The data is erased through electron tunneling. The memory cells are described as floating gate transistors wherein the floating gate is fabricated using a conductive layer of nanocrystalline silicon particles. Each nanocrystalline silicon particle has a diameter of about 10 Å to 100 Å. The nanocrystalline silicon particles are in contact such that a charge stored on the floating gate is shared between the particles. The floating gate has a reduced electron affinity to allow for data erase operations using lower voltages.
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Schwegman Lundberg Woessner & Kluth P.A.
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