Transistor with means for providing a non-silicon-based emitter

Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Bipolar transistor

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C257S190000, C257S205000, C257S511000, C257S517000, C257S557000

Reexamination Certificate

active

06903386

ABSTRACT:
A transistor includes a means for providing a non-silicon-based emitter with a flexible structure to relieve lattice mis-match between the emitter and the base.

REFERENCES:
patent: 4329625 (1982-05-01), Nishizawa et al.
patent: 4617724 (1986-10-01), Yokoyama et al.
patent: 5488236 (1996-01-01), Baliga et al.
patent: 6423990 (2002-07-01), El-Sharawy et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Transistor with means for providing a non-silicon-based emitter does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Transistor with means for providing a non-silicon-based emitter, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Transistor with means for providing a non-silicon-based emitter will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3499947

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.