Transistor with integrated diode and resistor

Details Transistor with integrated diode and resistor Transistor with integrated diode and resistor

1981-02-11

1983-08-09

Davie, James W.

357 48, 357 51, H01L 2702

Patent

active

043982069

ABSTRACT:
A semiconductor device including a transistor, diode and resistor comprises a body of semiconductor material formed with conventional emitter, base and collector regions. The collector region forms one electrode of the diode with the other electrode being formed in the region forming the base of the transistor and being separated from the base by an isolation ring. The contact between the emitter and the other electrode are integral, but are insulated from the isolation ring.

REFERENCES:
patent: 3230429 (1966-01-01), Stehney
patent: 3909837 (1975-09-01), Kronlage
patent: 3936863 (1976-02-01), Olmstead
patent: 4017882 (1977-04-01), Kannam et al.
patent: 4071852 (1978-01-01), Kannam

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