Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – With current flow along specified crystal axis
Reexamination Certificate
2008-01-15
2010-10-26
Nguyen, Dao H (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
With current flow along specified crystal axis
C257S019000, C257S191000, C257S368000, C257S369000, C257S374000, C257S537000, C257SE21223, C257SE21232, C257SE33003, C438S150000, C438S168000, C438S197000, C438S198000, C438S231000, C438S368000, C438S733000
Reexamination Certificate
active
07821044
ABSTRACT:
Embodiments are an improved transistor structure and the method of fabricating the structure. In particular, a wet etch of an embodiment forms source and drain regions with an improved tip shape to improve the performance of the transistor by improving control of short channel effects, increasing the saturation current, improving control of the metallurgical gate length, increasing carrier mobility, and decreasing contact resistance at the interface between the source and drain and the silicide.
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Tellier, C.R. et al., “Characterization of the Anisotropic Chemical Attack of (HHL) Silicon Plates in a TMAH 25 Weight % Solution: Micromachining and Adequacy of the Dissolution Slowness Surface”, Sensors and Actuators A, Elsevier Sequoia S.A., Lausanne, CH, vol. 105, No. 1, Jun. 15, 2003, pp. 62-75, XP004427479.
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Bohr Mark T.
Keating Steven J.
Letson Thomas A.
Murthy Anand S.
O'Neill Donald W.
Intel Corporation
Jalali Laleh
Nguyen Dao H
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