Transistor with heat dissipating means

Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure – Including additional component in same – non-isolated structure

Reexamination Certificate

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Details

C257S197000, C257S566000, C257S720000, C257SE27032

Reexamination Certificate

active

07741700

ABSTRACT:
A semiconductor device having sufficiently high heat dissipation performance while inhibiting an increase in the area of a chip is provided. In semiconductor device1, a plurality of HBTs20and a plurality of diodes30are one-dimensionally and alternately arranged on semiconductor substrate10. Anode electrode36of diode30is connected to emitter electrode27of HBT20via common emitter wiring42. Diode30works as heat dissipating elements dissipating to semiconductor substrate10the heat transmitted through common emitter wiring42from emitter electrode27, and also works as a protection diode connected in parallel between an emitter and a collector of HBT20.

REFERENCES:
patent: 2002/0195620 (2002-12-01), Tanomura et al.
patent: 2003/0111516 (2003-06-01), Ghoshal
patent: 55-056670 (1980-04-01), None
patent: 08-227896 (1996-09-01), None
patent: 08-279562 (1996-10-01), None
patent: 09-213711 (1997-08-01), None
patent: 10-125616 (1998-05-01), None
patent: 10-144801 (1998-05-01), None
patent: 11-274381 (1999-10-01), None
patent: 2000-277530 (2000-10-01), None
patent: 2001-060593 (2001-03-01), None
patent: 2001-168094 (2001-06-01), None
patent: 2002-344147 (2002-11-01), None
patent: 2003-224309 (2003-08-01), None

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