Transistor with gain variation compensation

Details Transistor with gain variation compensation Transistor with gain variation compensation

2011-07-19

2011-07-19

Pert, Evan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Charge transfer device

C257S286000, C257S401000, C257SE27131, C257SE29200

Reexamination Certificate

active

07982247

ABSTRACT:
A semiconductor device and method of making comprises providing an active device region and an isolation region, the isolation region forming a boundary with the active device region. A patterned gate material overlies the active device region between first and second portions of the boundary. The patterned gate material defines a channel within the active device region, the gate material having a gate length dimension perpendicular to a centerline along a principal dimension of the gate material which is larger proximate the first and second portions of the boundary than in-between the first and second portions of the boundary. The channel includes a first end proximate the first portion of the boundary and a second end proximate the second portion of the boundary, further being characterized by gate length dimension tapering on both ends of the channel.

REFERENCES:
patent: 6750518 (2004-06-01), Nishibe et al.
patent: 7348244 (2008-03-01), Aoki et al.
patent: 7402844 (2008-07-01), Sriram
patent: 2002/0113277 (2002-08-01), Mehrotra et al.
patent: 11-017167 (1999-01-01), None
patent: 2000049240 (2000-02-01), None
patent: 2003060197 (2003-02-01), None
PCT Application PCT/US2009/048648 Search Report and Written Opinion, mailed Jan. 28, 2010.

Affiliated with

Also associated with

Rating

Transistor with gain variation compensation does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Transistor with gain variation compensation, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Transistor with gain variation compensation will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2726024