Transistor with base/emitter encirclement configuration

Details Transistor with base/emitter encirclement configuration Transistor with base/emitter encirclement configuration

1975-09-29

1977-05-17

Wojciechowicz, Edward J.

357 36, 357 45, 357 54, 357 71, H01L 2348, H01L 2972, H01L 2710, H01L 2934

Patent

active

040245683

ABSTRACT:
In a transistor wherein a second conductivity type region is formed surrounding a first conductivity type region in a principal surface electrodes are formed on a surface of the first conductivity type region, an electrode of the second conductivity type region is formed in a manner to encircle the first-mentioned electrodes, and electrodes of the first conductivity type region are led outside the electrode of the second conductivity type region through an insulating film, whereby concentration of current is prevented.

REFERENCES:
patent: 3582726 (1971-06-01), Gilbert
patent: 3593068 (1971-07-01), Rosier
patent: 3922706 (1975-11-01), Kaiser

Affiliated with

Also associated with

Rating

Transistor with base/emitter encirclement configuration does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Transistor with base/emitter encirclement configuration, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Transistor with base/emitter encirclement configuration will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1838361