Transistor wherein the base area is covered with an insulating l

Details Transistor wherein the base area is covered with an insulating l Transistor wherein the base area is covered with an insulating l

1994-02-24

1997-09-09

Saadat, Mahshid D.

Active solid-state devices (e.g., transistors, solid-state diode

Bipolar transistor structure

With base region having specified doping concentration...

257370, 257556, 257557, 257575, 257630, 438339, H01L 2976, H01L 2900, H01L 27082, H01L 27102

Patent

active

056660014

ABSTRACT:
In production of a Bi-CMOS semiconductor device, when forming a lateral PNP transistor in a bipolar section, an oxide film is deposited on this base area to prevent etching damages such as those in forming an LDD spacer for a MOS section, thus degradation of the lateral PNP bipolar transistor and drop of yield in production thereof being prevented and a high performance (low cost) Bi-CMOS LSI being realized.

REFERENCES:
patent: 4581319 (1986-04-01), Wieder et al.
patent: 4859630 (1989-08-01), Josquin
patent: 5070381 (1991-12-01), Scott et al.
patent: 5089429 (1992-02-01), Hsu
patent: 5323057 (1994-06-01), Cook et al.

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