Active solid-state devices (e.g. – transistors – solid-state diode – Organic semiconductor material
Reexamination Certificate
2008-05-27
2008-05-27
Prenty, Mark (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Organic semiconductor material
C257S410000, C438S099000, C438S287000
Reexamination Certificate
active
11103267
ABSTRACT:
An organic thin film transistor having an insulator layer formed of a polymer compound having a repeat unit represented by the following formula [1] is disclosed:wherein R1, R2and R3are each independently a hydrogen atom or a methyl group, R4is a hydrogen atom or a linear, branched or bridged cyclic hydrocarbon group having 1 to 12 carbon atoms, and x and y are molar ratio and are any number satisfying x +y=1, 0<x≦1 and 0≦y<1.
REFERENCES:
patent: 5093691 (1992-03-01), Utsugi et al.
patent: 5355235 (1994-10-01), Nishizawa et al.
patent: 5612228 (1997-03-01), Shieh et al.
patent: 5705826 (1998-01-01), Aratani et al.
patent: 5854139 (1998-12-01), Aratani et al.
patent: 6060338 (2000-05-01), Tanaka et al.
patent: 6335539 (2002-01-01), Dimitrakopoulos et al.
patent: 7029945 (2006-04-01), Veres et al.
patent: 7186495 (2007-03-01), Maeda et al.
patent: 2003/0227014 (2003-12-01), Murti et al.
patent: 2004/0232411 (2004-11-01), Nakamura
patent: 2005/0017237 (2005-01-01), Ong et al.
patent: 2005/0056828 (2005-03-01), Wada et al.
patent: 2006/0118777 (2006-06-01), Hirakata et al.
patent: 2006/0192197 (2006-08-01), Koganei
patent: 2006/0231827 (2006-10-01), Hanato et al.
patent: 5-55568 (1993-03-01), None
patent: 8-228034 (1996-09-01), None
patent: 8-228035 (1996-09-01), None
patent: 9-232589 (1997-09-01), None
patent: 10-125924 (1998-05-01), None
patent: 10-190001 (1998-07-01), None
patent: 2000-174277 (2000-06-01), None
patent: 3145294 (2001-01-01), None
patent: 2001-94107 (2001-04-01), None
Ebisawa, F., et al., “Electrical properties of polyacetylene/polysiloxane interface”, Journal of Applied Physics (1983), vol. 54, pp. 3255-3259.
Peng, Xuezhou, et al., “All-organic thin-film transistors made of alpha-sexithienyl semiconducting and various polymeric insulating layers”, Applied Physics Letter (1990), vol. 57, pp. 2013-2015.
Garnier, Francis, et al., “All-Polymer Field-Effect Transistor Realized by Printing Techniques”, Science (1994), vol. 265, pp. 1684-1686.
Kudo, Kazuhiro, et al., “Schottky gate static induction transistor using copper phthalocyanine films”, Thin Solid Films (1998), vol. 331, pp. 51-54.
Endoh Hiroyuki
Hasegawa Etsuo
Maeda Katsumi
Toguchi Satoru
NEC Corporation
Prenty Mark
Scully , Scott, Murphy & Presser, P.C.
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