Transistor-type pressure sensor and method for fabricating...

Details Transistor-type pressure sensor and method for fabricating... Transistor-type pressure sensor and method for fabricating...

2008-08-11

2010-06-29

Allen, Andre J. (Department: 2855)

Measuring and testing

Fluid pressure gauge

Mounting and connection

C073S754000, C438S459000

Reexamination Certificate

active

07743664

ABSTRACT:
A transistor-type pressure sensor is provided, having an upper and a lower substrates, a source/drain formed on the lower substrate and separated from each other, a channel layer formed between and on the source/drain, a dielectric layer and a gate. The gate is substantially formed between the source and the drain. The surface of the gate, being in contact with the dielectric layer, has a stepped surface profile, so that the channel length/width ratio can be changed due to the pressure sensed by the pressure sensor.

REFERENCES:
patent: 5396118 (1995-03-01), Yaguchi
patent: 6137120 (2000-10-01), Shindo et al.
patent: 6177706 (2001-01-01), Shindo et al.
patent: 6880406 (2005-04-01), Yang
patent: 2004/0237661 (2004-12-01), Yang
patent: 2006/0205013 (2006-09-01), Shim et al.

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