Transistor testing circuit

Details Transistor testing circuit Transistor testing circuit

1975-09-12

1976-09-07

Rolinec, R. V.

Electricity: measuring and testing

Measuring, testing, or sensing electricity, per se

With rotor

324158D, G01R 3126

Patent

active

039796728

ABSTRACT:
An automated test set for determining the reverse biased second breakdown characteristics of a bipolar transistor without destroying or degrading the transistor under test (TUT). A source supplies current to the TUT through an inductor. The amplitude of this current increases in predetermined increments. After each current amplitude increase, the base-emitter junction of the TUT is reverse biased and the source is disabled. If enough energy is stored by the inductor to cause second breakdown, this breakdown is detected and the test is terminated. Otherwise, the test continues until the test current reaches a predetermined maximum amplitude, at which time the test is terminated. Damage to the TUT is avoided by restricting the stored energy to levels high enough to cause second breakdown but low enough that the remaining energy does not cause thermal damage.

REFERENCES:
patent: 3371276 (1968-02-01), Schiff
Sunshine et al.; "Second-Breakdown . . ."; IEEE Trans on Electron Devices; vol. ED-19; July, 1972; pp. 873-885.

Affiliated with

Also associated with

Rating

Transistor testing circuit does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Transistor testing circuit, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Transistor testing circuit will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2175051