Transistor switching circuit having diode-resistor in base of tr

Details Transistor switching circuit having diode-resistor in base of tr Transistor switching circuit having diode-resistor in base of tr

1991-08-07

1992-09-08

Miller, Stanley D.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307300, H03K 1760

Patent

active

051461072

ABSTRACT:
In a switching circuit formed as an integrated circuit, a series circuit comprising a diode (D.sub.1) and a resistor (R.sub.1) is connected between a base and an emitter of an npn transistor (TR.sub.1) requiring a high speed switching operation. Therefore, a high speed operation is made possible. Furthermore, in a circuit constructed such that the above npn transistor is driven by a pnp transistor (TR.sub.3, TR.sub.4), a leakage current produced in the above pnp transistor at high temperature is allowed to flow in the above series circuit. Accordingly, a malfunction of the above npn transistor is prevented. Consequently, an integrated circuit operable even under high temperatures is achieved.

REFERENCES:
patent: 4228371 (1980-10-01), Mazgy
patent: 4549095 (1985-10-01), Stefani et al.
patent: 4697103 (1987-09-01), Ferris et al.
patent: 4701631 (1987-10-01), Chieli

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