Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure – Including additional component in same – non-isolated structure
Patent
1994-08-03
1998-11-17
Prenty, Mark V.
Active solid-state devices (e.g., transistors, solid-state diode
Bipolar transistor structure
Including additional component in same, non-isolated structure
257610, 307125, H01L 27082, H01H 4700
Patent
active
058380574
ABSTRACT:
An electronic switch (80) having a transistor (T) and a diode (D) formed on a substrate (82) is provided. The electronic switch (80) includes a common transistor collector and diode cathode region (81) of a first conductivity type formed in the substrate (82). The switch (80) also includes a transistor base region (83) of a second conductivity type formed in a first section of the collector region (81) and a transistor emitter region (84) of the first conductivity type formed in a section of the base region (83). Additionally, the electronic switch (80) includes a diode anode region (85) formed of the second conductivity type and in a second section of the collector region (81). At least a portion of the anode region (85) is selectively doped with a metallic dopant to provide centers for charge carrier recombination so as to decrease the recovery time of the diode (D).
REFERENCES:
patent: 5343068 (1994-08-01), Frisina et al.
patent: 5469103 (1995-11-01), Shigekane
Garnham David
Maytum Michael
Donaldson Richard L.
Kesterson James C.
Maginniss Christopher L.
Prenty Mark V.
Texas Instruments Incorporated
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