Transistor switch

Miscellaneous active electrical nonlinear devices – circuits – and – Gating

Reexamination Certificate

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Details

C327S379000, C327S389000, C327S391000, C327S427000

Reexamination Certificate

active

07492207

ABSTRACT:
A circuit is disclosed, including a transistor switch having a first terminal to receive an input voltage, a second terminal to output an output voltage and a gate terminal; a determination circuit, coupled to the first terminal and the second terminal of the transistor switch, to determine a lower or higher voltage between the input voltage and the output voltage; a voltage generator, coupled to the determination circuit, to generate a sum voltage or difference voltage using the lower or higher voltage; and a control circuit, coupled to the voltage generator and the gate terminal of the transistor switch, to apply the sum voltage or difference voltage to the gate terminal of the transistor switch during a first time interval.

REFERENCES:
patent: 7372301 (2008-05-01), Fukuoka et al.
Abo et al., “A 1.5-V, 10-bit, 14.3-MS/s CMOS Pipeline Analog-to-Digital Converter,” IEEE Journal of Solid-State Circuits, vol. 34, No. 5, May 1999, pp. 599-606.
Dessouky et al., “Very Low-Voltage Digital-Audio ΔΣ Modulator with 88-dB Dynamic Range Using Local Switch Bootstrapping,” IEEE Journal of Solid-State Circuits, vol. 36, No. 3, Mar. 2001, pp. 349-355.
Gupta et al., A 64-MHz Clock-Rate ΣΔ ADC With 88-dB SNDR and -105-dB IM3 Distortion at a 1.5-MHz Signal Frequency, IEEE Journal of Solid-State Circuits, vol. 37, No. 12, Dec. 2002, pp. 1653-1661.
Keskin et al, “A Low-Voltage CMOS Switch With a Novel Clock Boosting Scheme,” IEEE Transactions on Circuits and Systems-II: Express Briefs, vol. 52, No. 4, Apr. 2005, pp. 185-188.
Pan et al., “A 3.3-V 12-b 50-MS/s A/D Converter in 0.6-μm CMOS with over 80-dB SFDR,” IEEE Journal of Solid-State Circuits, vol. 35, No. 12, Dec. 2000, pp. 1769-1780.
Steensgaard, Jesper, “Bootstrapped Low-Voltage Analog Switches,” The Technical University of Denmark, 1999 IEEE, pp. II-29-II32.

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