Transistor structures having a transparent channel

Active solid-state devices (e.g. – transistors – solid-state diode – Semiconductor is an oxide of a metal or copper sulfide

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C257S613000

Reexamination Certificate

active

10307162

ABSTRACT:
Enhancement mode, field effect transistors wherein at least a portion of the transistor structure may be substantially transparent. One variant of the transistor includes a channel layer comprising a substantially insulating, substantially transparent, material selected from ZnO or SnO2. A gate insulator layer comprising a substantially transparent material is located adjacent to the channel layer so as to define a channel layer/gate insulator layer interface. A second variant of the transistor includes a channel layer comprising a substantially transparent material selected from substantially insulating ZnO or SnO2, the substantially insulating ZnO or SnO2being produced by annealing. Devices that include the transistors and methods for making the transistors are also disclosed.

REFERENCES:
patent: 3385731 (1968-05-01), Weimer
patent: 4582395 (1986-04-01), Morozumi
patent: 4823803 (1989-04-01), Nakamura
patent: 5374570 (1994-12-01), Nasu et al.
patent: 5625199 (1997-04-01), Baumbach et al.
patent: 5741580 (1998-04-01), Hayamizu et al.
patent: 5744864 (1998-04-01), Cillessen et al.
patent: 6281552 (2001-08-01), Kawasaki et al.
patent: 6291837 (2001-09-01), Nakajima et al.
patent: 6351428 (2002-02-01), Forbes
patent: 6384448 (2002-05-01), Forbes
patent: 6563174 (2003-05-01), Kawasaki et al.
patent: 6617209 (2003-09-01), Chau et al.
patent: 2002/0056838 (2002-05-01), Ogawa
patent: 2003/0047785 (2003-03-01), Kawasaki et al.
patent: 2003/0218222 (2003-11-01), Wager et al.
patent: 2004/0023432 (2004-02-01), Haga
patent: 2004/0127038 (2004-07-01), Carcia et al.
patent: 0 387 892 (1989-03-01), None
patent: 1 134 811 (2001-09-01), None
patent: 1134811 (2001-09-01), None
patent: 1 172 585 (2002-06-01), None
patent: 56125868 (1981-10-01), None
patent: 05-251705 (1993-09-01), None
patent: 06-067187 (1994-03-01), None
patent: 07114351 (1995-05-01), None
patent: 07202208 (1995-08-01), None
patent: 10041477 (1998-02-01), None
patent: 2000150900 (2000-05-01), None
patent: 2001244464 (2001-09-01), None
patent: 2002-076356 (2002-03-01), None
patent: 2002076356 (2002-03-01), None
patent: 2003-086808 (2003-03-01), None
Horowitz,Adv. Mater., 10(5):365-377 (1998).
Kim,Information Display, pp. 26-30 (2002).
Kobayashi et al.,Applied Surface Science, 113(114):480-484 (1997).
Ohya et al.,Jpn. J. Appl. Phys. vol. 40(1):297-298 (2001).
Prins et al.,Appl. Phys. Lett, 68(25):3650-3652 (1996).
“PASSS; Portland Area Semiconductor Seminar Series,” http://www.ece.ogi.edu/passsschedule.html, p. 1 of 12 and p. 7 of 12, accessed Nov. 14, 2002.
“All zinc ozide (ZnO) functionally harmonized material,” http://www/sanken/osaka-u.ac.jp/labs/kawai-lab/english/Details2/matsui.htm, pp. 1-2 of 2 and p. 1 of 1, accessed Jul. 2, 2002.
Jiménez-González et al., “Optical and electrical characteristics of aluminum-doped Zn) thin films prepared by solgel technique,”Journal of Crystal Growth192:430-438, 1998, no month cited.
Lee et al., “Electrical and optical properties of ZnO transparent conducting films by the sol-gel method,”Journal of Crystal Growth247:119-125, 2003, no month cited.
Natsume et al., “Zinc oxide films prepared by sol-gel spin-coating,”Thin Solid Films372:30-36, 2000, no month cited.
Nishii et al., “High Mobility Thin Film Transistors with Transparent ZnO Channels,”The Japan Society of Applied Physics42(2)(4A):L347-L349, 2003, no month cited.
Nishio et al., “Preparation of highly oriented thin film exhibiting transparent conduction by sol-gel process,”Journal of Materials Science31:3651-3656, 1996, no month cited.
Norris et al., “Spin-coated zinc oxide transparent transistors,”Journal of Physics D: Applied Physics36:L105-L107, 2003, no month cited.
Ohya et al., “Preparation of transparent, electrically conducting ZnO film from zinc acetate and alkoxide,”Journal of Materials Science29:4099-4103, 1994, no month cited.
Ohya et al., “Microstructure of Sol-Gel ZnO Thin Films Fabricated Using Ethanolamine and Hydroxyketone Modifiers,”Journal of the Ceramic Society of Japan113(3):220-225, 2005, no month cited.
Shaoquiang et al., “Nanocrystalline ZnO thin films on porous silicon/silicon substrates obtained by sol-gel technique,”Applied Surface Science241:384-391, 2005, no month cited.
Wessler et al., “Textured ZnO thin films on (0001) sapphire produced by chemical solution deposition,”J. Mater. Res. 17(7):1644-1650, 2002, no month cited.
Ohtomo et al., “Novel Semiconductor Technologies of Zn Films Towards Ultraviolet LEDs and Invisible FETs,”IEICE Trans. Electron. E83-C(10):1614-1617, 2000.
Kawasaki et al., “Can ZnO Eat Market in Optoelectronic Applications?,”Extended Abstracts of the 2000 International Conference on Solid State Devices and Materials, pp. 128-129, Sendai, 2000.
Ohya et al.,Jpn. J. Appln. Phys. 40(1):297-298, 2001.
G. Golan et al., “A Linear model application for the design of transparent conductive In2O3coatings,”Microelectronics Journal29, 1998, pp. 689-694.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Transistor structures having a transparent channel does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Transistor structures having a transparent channel, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Transistor structures having a transparent channel will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3793169

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.