Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Field effect transistor
Reexamination Certificate
2006-08-01
2008-11-04
Malsawma, Lex (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Field effect transistor
C257S288000, C257SE29270
Reexamination Certificate
active
07446351
ABSTRACT:
A transistor structure includes a first undoped, silicon-containing channel layer, a buried germanium channel, and a second undoped, silicon-containing channel layer. The first and second channel layers may contain SiGe or, alternatively, Si only. Another transistor structure includes a first channel layer, a buried germanium channel, and a second, undoped channel layer containing silicon and germanium over the buried channel. A further transistor structure includes a first channel layer, a buried germanium channel, and a second channel layer containing compositionally graded SiGe over the buried channel. A still further transistor structure includes a first silicon layer, an undoped or homogeneously doped buried channel containing silicon and germanium, and a second silicon layer over the buried channel.
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Malsawma Lex
MICRON Technology, Inc.
Wells St. john P.S.
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