Active solid-state devices (e.g. – transistors – solid-state diode – Semiconductor is an oxide of a metal or copper sulfide
Reexamination Certificate
2003-01-24
2008-03-04
Landau, Matthew C. (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Semiconductor is an oxide of a metal or copper sulfide
C257S613000, C257SE29100
Reexamination Certificate
active
07339187
ABSTRACT:
Enhancement mode, field effect transistors wherein at least a portion of the transistor structure may be substantially transparent. One variant of the transistor includes a channel layer comprising a substantially insulating, substantially transparent, material selected from ZnO, SnO2, or In2O3. A gate insulator layer comprising a substantially transparent material is located adjacent to the channel layer so as to define a channel layer/gate insulator layer interface. A second variant of the transistor includes a channel layer comprising a substantially transparent material selected from substantially insulating ZnO, SnO2or In2O3, the substantially insulating ZnO, SnO2, or In2O3being produced by annealing. Devices that include the transistors and methods for making the transistors are also disclosed.
REFERENCES:
patent: 4823803 (1989-04-01), Nakamura
patent: 6281552 (2001-08-01), Kawasaki et al.
patent: 6291837 (2001-09-01), Nakajima et al.
patent: 6563174 (2003-05-01), Kawasaki et al.
patent: 6617209 (2003-09-01), Chau et al.
patent: 2002/0056838 (2002-05-01), Ogawa
patent: 2003/0047785 (2003-03-01), Kawasaki et al.
patent: 2003/0218221 (2003-11-01), Wager et al.
patent: 2004/0023432 (2004-02-01), Haga
patent: 2004/0127038 (2004-07-01), Carcia et al.
patent: 1 134 811 (2001-09-01), None
patent: 05-251705 (1993-09-01), None
patent: 06-067187 (1994-03-01), None
patent: 407202208 (1995-08-01), None
patent: 10041477 (1998-02-01), None
patent: 2000150900 (2000-05-01), None
patent: 2001244464 (2001-09-01), None
patent: 2001244464 (2001-09-01), None
patent: 2002076356 (2002-03-01), None
patent: 2003-086808 (2003-03-01), None
G.Golan et al., A linear model application for the design of transparent conductive In2O3 coatings, 1998, Elsevier, Microelectronics Journal 29, pp. 689-694.
Kawasaki et al., “Can ZnO Eat Market in Optoelectronic Applications?, ”Extended Abstracts of the 2000 International Conference on Solid State Devices and Materials, pp. 128-129, Sendai, 2000.
Ohya et al.,Jpn. J. Appln. Phys.40(1) :297-298, 2001.
Jiménez-González et al., “Optical and electrical characteristics of aluminum-doped Zn) thin films prepared by solgel technique,”Journal of Crystal Growth192:430-438, 1998.
Lee et al., “Electrical and optical properties of ZnO transparent conducting films by the sol-gel method,”Journal of Crystal Growth247:119-125, 2003.
Natsume et al., “Zinc oxide films prepared by sol-gel spin-coating,”Thin Solid Films372:30-36, 2000.
Nishii et al., “High Mobility Thin Film Transistors with Transparent ZnO Channels,”The Japan Society of Applied Physics42(2)(4A):L347-L349, 2003.
Nishio et al., “Preparation of highly oriented thin film exhibiting transparent conduction by sol-gel process,”Journal of Materials Science31:3651-3656, 1996.
Norris et al., “Spin-coated zinc oxide transparent transistors,”Journal of Physics D: Applied Physics36:L105-L107, 2003.
Ohya et al., “Preparation of transparent, electrically conducting ZnO film from zinc acetate and alkoxide,”Journal of Materials Science29:4099-4103, 1994.
Ohya et al., “Thin Film Transistor of ZnO Fabricated by Chemical Solution Deposition,”The Japan Society of Applied Physics40(1)(1):297-298, 2001.
Ohya et al., “Microstructure of Sol-Gel ZnO Thin Films Fabricated Using Ethanolamine and Hydroxyketone Modifiers,”Journal of the Ceramic Society of Japan113(3):220-225, 2005.
Shaoqiang et al., “Nanocrystalline ZnO thin flims on porous silicon/silicon substrates obtained by sol-gel technique,”Applied Surface Science241:384-391, 2005.
Wessler et al., “Textured ZnO thin films on (0001) sapphire produced by chemical solution deposition,”J. Matter. Res.17(7):1644-1650, 2002.
Ohtomo et al., “Novel Semiconductor Technologies of Zn Films Towards Ultraviolet LEDs and Invisible FETs,”IEICE Trans. Electron.E83-C(10):1614-1617, 2000.
Hoffman Randy L.
Wager, III John F.
Klarquist & Sparkman, LLP
Landau Matthew C.
State of Oregon acting by and through the Oregon State Board of
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