Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure – With base region having specified doping concentration...
Patent
1993-02-22
1994-05-24
Hille, Rolf
Active solid-state devices (e.g., transistors, solid-state diode
Bipolar transistor structure
With base region having specified doping concentration...
257554, 257559, 257197, H01L 2972, H01L 29161
Patent
active
053151518
ABSTRACT:
A method of fabricating a semiconductor structure, comprising the steps of: providing a monocrystalline semiconductor device region of a first conductivity type; forming a layer of intrinsic monocrystalline semiconductor material over the device region; forming a layer of insulating material over the layer of intrinsic monocrystalline semiconductor material; forming a conductive contact over a portion of the layer of insulating material; forming an aperture extending through the conductive contact, and the layers of insulating material and intrinsic monocrystalline semiconductor material to define an aperture exposing a selected portion of the layer of intrinsic monocrystalline semiconductor material; and forming a layer of semiconductor material of a second conductivity type including a monocrystalline portion disposed epitaxially over the device region portion and a polycrystalline portion extending onto the wall of the conductive contact within the aperture.
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Hsieh Chang-Ming
Hsu Louis L.
Silvestri Victor J.
Brandt Jeffrey L.
Hille Rolf
Huberfeld Harold
International Business Machines - Corporation
Saadat Mahshid
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