Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Including dielectric isolation means
Patent
1994-06-09
1996-08-06
Brown, Peter Toby
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Including dielectric isolation means
257586, 257592, 257653, 257657, H01L 2973, H01L 29861
Patent
active
055436552
ABSTRACT:
The present invention is directed to an improved base-collector junction transistor structure capable of higher junction breakdown voltages and lower junction capacitances than bipolar transistors of the prior art. A narrow trench is used to positively affect junction breakdown voltage and junction capacitance. The trench allows the beneficial characteristics of both depletion ring and mesa structures to be utilized. Depletion zone profiles that negatively affect junction breakdown voltage are minimized by using the trench and a depletion enhancing channel.
REFERENCES:
patent: 4165516 (1979-08-01), Smulders
patent: 4805004 (1989-02-01), Gandolfl et al.
Translation of EPO Application #0 519 268 A3, published Dec. 23, 1992, Brostroem et al.
Translation of German Patent #2 930 460, published Jan. 29, 1981, Ressel.
Translation of German Patent #2 745 300 A1, published Apr. 13, 1978, Misawa et al.
Translation of French Patent No. 2 173 729, published Oct. 12, 1973.
Translation of Japan Kokai Publication #01-0223766 to Scimizu, 257/586, 14 pages.
Brown Peter Toby
Jorgenson Lisa K.
Larson Renee M.
SGS-Thomson Microelectronics Inc.
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