1987-08-20
1989-07-04
James, Andrew J.
357 238, 357 2313, 357 41, H01L 2978
Patent
active
048455369
ABSTRACT:
The invention relates to a field-effect transistor (1;20) with insulated gate electrode (9;30) which comprises in a semiconductor body (5) a drain diffusion zone (2) connected to a drain electrode (6;32) and a source diffusion zone (3) which is disposed spaced from the drain diffusion zone (2) for forming a channel zone (4) and which is connected to a source electrode (7). The gate electrode (9;32) of said field-effect transistor is disposed on a gate insulating layer (8) over the channel zone (4). For protecting the transistor against high voltages produced by electrostatic charging the drain diffusion zone (2) of the transistor and/or the source diffusion zone (3) between the respective associated electrode (6,7;32) and the channel zone (4) is divided into a plurality of parallel strips (10,11). Integrated circuits are also protected against destruction by high voltages if the insulated gate field-effect transistors connected to their output terminals are constructed in the manner outlined above.
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Heinecke Guenter
Soobik Lembit
Honeycutt Gary C.
James Andrew J.
Merrett N. Rhys
Prenty Mark
Sharp Melvin
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