Transistor stored charge control using a recombination layer dio

Details Transistor stored charge control using a recombination layer dio Transistor stored charge control using a recombination layer dio

1975-12-24

1977-07-12

James, Andrew J.

Electrical transmission or interconnection systems

Personnel safety or limit control features

Interlock

357 13, 357 64, 357 90, 307281, 307283, 307319, H01L 2990, H03K 333, H03K 1760, H03K 1908

Patent

active

040356701

ABSTRACT:
The on-to-off switching time of a junction transistor is reduced by forward connecting a recombination layer diode between the base and collector of the transistor. Preferably, the diode comprises a semiconductor abrupt junction of the type having a relatively heavily doped region of first conductivity type, a relatively lightly doped region of opposite conductivity type, and immediately adjacent the effective junction, a thin "recombination layer" of a carrier recombination-generation type material with a dopant concentration intermediate that of the two junction regions. Such a diode exhibits very low forward turn-on voltage and fast forward and reverse recovery times. The diode functions to bypass base-collector toward current of the transistor so as to reduce excess stored charge at the transistor collector-base junction, thereby effectively eliminating the storage delay time typically associated with junction transistor turn-off.

REFERENCES:
patent: 3244949 (1966-04-01), Hilbiber
patent: 3623925 (1971-11-01), Jenkins et al.
patent: 3727116 (1973-04-01), Thomas et al.

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