Transistor provided with strained germanium layer

Details Transistor provided with strained germanium layer Transistor provided with strained germanium layer

1991-09-13

1993-08-31

Jackson, Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

257616, H01L 29161, H01L 2920

Patent

active

052411974

ABSTRACT:
A transistor having a high carrier mobility and suited for a high-speed operation can be formed by utilizing a fact that the carrier mobility in a strained germanium layer is large. A strain control layer is provided beneath the germanium layer to impose a compressive strain on the germanium layer, and the composition of the strain control layer in a predetermined range is used to generate the compressive strain surely.

REFERENCES:
patent: 4529455 (1985-07-01), Bean et al.
patent: 4710478 (1987-12-01), Yoder et al.
patent: 4771326 (1988-09-01), Curran
patent: 4800415 (1989-01-01), Simmons et al.
patent: 5019882 (1991-05-01), Solomon et al.
Lang et al., "Measurement of the Band Gap of Ge.sub.x Si.sub.1-x /Si Strained-Layer Heterostructures", Appl Phys Lett 47(12) Dec. 15, 1985, pp. 1333-1335.
IBM Technical Disclosure Bulletin, vol. 31, No. 2 (New York, NY), pp. 205-208, "Self-Aligned Mesa Transistor".
Pearsall et al., "Enhancement and Depletion Mode p-Channel Ge.sub.x Si.sub.1-x Modulation Doped FET's", IEEE Electron Dev. Lett., vol. EDl 7(5) May 1986.

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