Transistor protection circuit

Details Transistor protection circuit Transistor protection circuit

1997-06-03

1998-07-14

Gaffin, Jeffrey A.

Electricity: electrical systems and devices

Safety and protection of systems and devices

Load shunting by fault responsive means

361111, H02H 900

Patent

active

057813892

ABSTRACT:
The transistor protection device provides a circuit capable of obtaining a sufficient discharge characteristic when an electrostatic discharge voltage is applied to a semiconductor integrated circuit composed of a bipolar transistor. The protection device is provided across an emitter-base (E-B) junction of the bipolar transistor. When an electrostatic discharge voltage for biasing the E-B junction in the reverse direction is applied, the protection device is turned on and the surge current flows through the protection device such that the current which flows into the E-B junction of the transistor is greatly reduced so as to prevent electrostatic breakdown.

REFERENCES:
patent: 4736271 (1988-04-01), Mack et al.
patent: 4811155 (1989-03-01), Kuriyama et al.
patent: 5189588 (1993-02-01), Yano et al.
patent: 5287241 (1994-02-01), Puar
patent: 5357393 (1994-10-01), Mojaradi et al.
patent: 5521783 (1996-05-01), Wolfe et al.
Patent Abstracts Of Japan, vol. 15, No. 375 (E-1114), 20 Sep. 1991 (for JP-A-03 148865, 25 Jun. 1991).
"Investigation Report on Electrostatic Breakdown of Semiconductor Devices and Method of Evaluating Same", Mar., 1995, issued by Foundation Nippon Denshi Buhin Shinraisei Senta.

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