Transistor package structured to provide heat dissipation enabli

Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – With housing mount

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Details

257712, 257731, 257725, 257728, 257774, 257733, 361714, 361688, H01L 2312, H01L 2302, H01L 2352

Patent

active

057367876

ABSTRACT:
A package for relatively high power transistors including heat conducting mounting flange having a relatively large "footprint" relative to the area covered by at least one active chip supported thereby and comprised of a plurality of bipolar silicon-carbide transistors. The transistors are located on a dielectric substrate brazed to the flange. A plurality of screw mounting holes, preferably eight in number, are included in the mounting flange adjacent the outer edge of the dielectric substrate so as to surround the chip. Mounting screws in the eight mounting holes together with a relatively large flange/ground plane interface significantly improves heat dissipation for the heat generated by the silicon carbide transistors by promoting radial heat spreading through the heat conductive metal flange.

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patent: 5365108 (1994-11-01), Anderson et al.
patent: 5455448 (1995-10-01), Benjamin
patent: 5481436 (1996-01-01), Werther
patent: 5488252 (1996-01-01), Johansson et al.
patent: 5519253 (1996-05-01), Lake et al.

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