Semiconductor device manufacturing: process – Having organic semiconductive component
Reexamination Certificate
2011-07-12
2011-07-12
Pert, Evan (Department: 2893)
Semiconductor device manufacturing: process
Having organic semiconductive component
C438S197000, C257S040000, C257SE21299
Reexamination Certificate
active
07977149
ABSTRACT:
The invention provides a process for production of a transistor and an organic semiconductor element which allows satisfactory formation of active layers on desired surfaces, even if the active layers are organic semiconductor compound-containing active layers imparted with prescribed properties beforehand. A preferred mode of the process for production of a transistor is a process for production of a transistor provided with a source electrode and drain electrode, an active layer containing an organic semiconductor compound as a current channel between the electrodes, a gate electrode that controls the current flowing through the current channel and an insulating layer disposed between the active layer and gate electrode, wherein the process includes a pasting step in which a working liquid is situated between the active layer and insulating layer and the active layer and insulating layer are attached together.
REFERENCES:
patent: 6107117 (2000-08-01), Bao et al.
patent: 6885024 (2005-04-01), Bao et al.
patent: 2005/0000353 (2005-01-01), Nemser
patent: 2005/0064623 (2005-03-01), Bao
patent: 2006/0024860 (2006-02-01), Wada et al.
patent: 1453636 (2003-11-01), None
patent: 2004-006476 (2004-01-01), None
patent: 2004-146430 (2004-05-01), None
patent: 2005-101520 (2005-04-01), None
patent: 2005-123290 (2005-05-01), None
Vikram C. Sundar et al., “Elastomeric Transistor Stamps: Reversible Probing of Charge Transport in Organic Crystals”, Science, vol. 303, (2004), pp. 1644-1646.
Michael L. Chabinyc et al., “Lamination Method for the Study of Interfaces in Polymeric Thin Film Transistors”, Journal of the American Chemical Society, vol. 126, (2004), pp. 13928-13929.
S. Matsumoto et al., “Liquid Crystal Fundamentals and Applications”, Kogyo Chosakai Publishing, (1991), pp. 95-105.
A. Fukuda et al., “Structures and Properties of Ferroelectric Liquid Crystals”, Corona Publishing, (1990), pp. 227-269.
“Liquid Crystals”, vol. 3, No. 1, (1999), pp. 3-16.
S.R. Wasserman et al., “Structure and Reactivity of Alkylsiloxane Monolayers Formed by Reaction of Alkyltrichlorosilanes on Silicon Substrates”, Langmuir, vol. 5, (1989), pp. 1074-1087.
P. Dyreklev et al., “Aligned Polymer Chain Field Effect Transistors”, Solid State Communications, vol. 82, No. 5, (1992), pp. 317-320.
P. Dyreklev et al., “Polymeric Field Effect Transistors Using Oriented Polymers”, Synthetic Metals, 55-57, (1993), pp. 4093-4098.
Yong-Young Noh, et al., “Organic Field-Effect Transistors by a Wet-Transferring Method,” Applied Physics Letters, Aug. 11, 2003, pp. 8-10, vol. 83, No. 6, American Institute of Physics.
Lin, Y. et al. Stacked Pentacene Layer Organic Thin-Film Transistors with Improved Characteristics, IEEE Electron Device Letters, Dec. 1997, vol. 18, No. 12, pp. 606-608.
Pert Evan
Rodela Eduardo A
Sughrue & Mion, PLLC
Sumitomo Chemical Company Limited
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