Transistor on the basis of new quantum interference effect

Details Transistor on the basis of new quantum interference effect Transistor on the basis of new quantum interference effect

2011-02-22

2011-02-22

Menz, Douglas M (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

C257S014000

Reexamination Certificate

active

07893422

ABSTRACT:
A quantum interference transistor comprising a thin metal film having a protrusion and a thin insulating layer between the metal film and protrusion. A potential barrier is formed in the region beneath the protrusion as a result of quantum interference caused by the geometry of the film and protrusion. A voltage applied between the electrically isolated protrusion (“island”) and the thin film leads to a change in the electron wave function of the island which in turn leads to a change in the Fermi level of the metal film in the entire region beneath the protrusion. Consequently, a potential barrier may or may not exist depending on the applied voltage, thus providing the present invention with the transistor-like property of switching between open and closed states.

REFERENCES:
patent: 4888622 (1989-12-01), Ishibashi et al.
patent: 5497015 (1996-03-01), Ishibashi et al.
patent: 5682041 (1997-10-01), Kawakubo et al.
patent: 7166786 (2007-01-01), Tavkhelidze et al.

Affiliated with

Also associated with

Rating

Transistor on the basis of new quantum interference effect does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Transistor on the basis of new quantum interference effect, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Transistor on the basis of new quantum interference effect will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2628493