Transistor of semiconductor device, and method for...

Details Transistor of semiconductor device, and method for... Transistor of semiconductor device, and method for...

2005-02-08

2005-02-08

Fourson, George (Department: 2823)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Groove formation

C438S222000

Reexamination Certificate

active

06852559

ABSTRACT:
A semiconductor device and a method for forming the same are disclosed. The semiconductor device includes an epitaxial source/drain junction layer having an insulating film thereunder. The method comprises the step of forming a under-cut under an epitaxial source/drain junction layer so that an insulating film filling the under-cut can be formed.

REFERENCES:
patent: 6605498 (2003-08-01), Murthy et al.
patent: 20020142557 (2002-10-01), Hashimoto et al.
F. Scott Johnson et al., “Selective Chemical Etching of Polycrystalline SiGe Alloys with Respect to Si and SiO2”, Journal of Electronic Materials, 1992, pp. 805-810, vol. 21, No. 8.

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