Transistor module

Details Transistor module Transistor module

2005-12-20

2005-12-20

Nguyen, Cuong (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Housing or package

With contact or lead

C257S690000, C257S724000

Reexamination Certificate

active

06977430

ABSTRACT:
A transistor module formed on a substrate comprises a first transistor, a first recovery diode, a second transistor and a second recovery diode. A first transistor chip associated with the first transistor and a second diode chip associated with the second recovery diode are disposed adjacently on a positive potential area. The first transistor chip and the second diode chip are disposed on an output potential area. A second transistor chip associated with the second transistor and a first diode chip associated with the first recovery diode are adjacently disposed on the output potential area. At least two sides of the output potential area are adjacent to a negative potential area. Both the second transistor chip and the first diode chip are connected to the negative potential area, and one of the first and second transistor chips is disposed opposite one of the first and second diode chips located on a different potential area.

REFERENCES:
patent: 4470095 (1984-09-01), Donig
patent: 4668904 (1987-05-01), Kupiainen
patent: 5616955 (1997-04-01), Yamada et al.
patent: 5701076 (1997-12-01), Schmitt et al.
patent: 5895974 (1999-04-01), Eytcheson et al.
patent: 6822338 (2004-11-01), Aono et al.
Kolar et al., “Design and experimental investigation of a three-phase high power density high efficiency unity power factor . . . ”, p. 514-523.
Gutsmann, B. et al., “Exact inductive parasitic extraction for analysis of IGBT parallel switching . . . ”, p. 12291-1295.

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