Transistor microwave oscillator having adjustable zone of potent

Details Transistor microwave oscillator having adjustable zone of potent Transistor microwave oscillator having adjustable zone of potent

1990-03-14

1991-02-05

Grimm, Siegfried H.

Oscillators

With distributed parameter resonator

Parallel wire type

331117D, 331117FE, H03B 518

Patent

active

049908650

ABSTRACT:
A microwave oscillator having at least one transistor (1), which may be bipolar or otherwise. A tunable reactive circuit (13, 15, 16) suitable for adjusting the transistor's zone of potential instability is inserted in the emitter circuit of the transistor (1) (or in the source circuit of an FET). The reactive circuit comprises a series length of transmission line (13) and a parallel capacitance (15, 16) constituted, at least in part, by a conducting slab (15) of adjustable size.

REFERENCES:
patent: 4639690 (1987-01-01), Lewis
patent: 4684904 (1987-08-01), Watkins et al.
patent: 4736169 (1988-04-01), Weaver et al.
patent: 4736454 (1988-04-01), Hirsch
patent: 4758804 (1988-07-01), Inoue et al.
NEC Electronics (Europe) GmbH; Preliminary Data Sheet for NPN Silicon High Frequency Transistor NE856 (10 pages, Jun. 1985).

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