Transistor matrix device including features for minimizing the e

Details Transistor matrix device including features for minimizing the e Transistor matrix device including features for minimizing the e

1996-05-06

1999-08-31

Sikes, William L.

Liquid crystal cells, elements and systems

Particular excitation of liquid crystal

Electrical excitation of liquid crystal

349 43, 349 38, G02F 1136, G02F 11343

Patent

active

059460580

ABSTRACT:
A plurality of parallel gate bus lines 16n, 16n+1, 16n+2, . . . and a plurality of parallel drain bus lines 18m, 18m+1, . . . are provided. Thin film transistors 14 are disposed near the lower end of sub-patterns 30n, 30n+1, 30n+2, . . . The source electrodes 36 of the thin film transistors 14 are picture element electrodes 12 through contact holes 38. The picture element electrodes 12 are formed at positions which are beyond a next gate bus line 16n, 16n+1, 16n+2, . . . Intermediate electrodes 40 for forming sub-capacitances Cs are formed on the lower ends of the picture element electrodes 12. The thin film transistor matrix device can form sub-capacitances of a large capacitance value and does not reduce fabrication yields.

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