Transistor made of 3-5 group semiconductor materials on a silico

Details Transistor made of 3-5 group semiconductor materials on a silico Transistor made of 3-5 group semiconductor materials on a silico

1990-12-05

1992-08-11

Hille, Rolf

357 15, 357 16, 357 61, H01L 2908

Patent

active

051384078

ABSTRACT:
The present invention concerns a transistor of semiconductor materials of the 3-5 group on silicon of the type comprising a silicon substrate, at least one layer of semi-insulating 3-5 material and several doped layers of 3-5 group semiconductor material in which is defined at least one conducting channel equipped with a gate metallization, each channel being situated between two access regions alternately known as source and drain, each source and drain regions with a metallization, one of the two access regions to a channel being electrically and thermally connected to the silicon substrate. In accordance with the invention, the transistor comprises between the silicon substrate and the semi-insulating layer of 3-5 group semiconductor material, at least one buffer layer of intrinsic silicon.

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