Transistor layout for manufacturing process control

Details Transistor layout for manufacturing process control Transistor layout for manufacturing process control

2011-07-26

2011-07-26

Smith, Matthew (Department: 2895)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

With current flow along specified crystal axis

C257S369000, C257SE21602, C257SE21632, C257SE29004, C257SE29345, C438S129000, C438S199000

Reexamination Certificate

active

07985990

ABSTRACT:
A symmetrical circuit is disclosed (FIG.4). The circuit includes a first transistor (220) having a first channel in a substantial shape of a parallelogram (FIG.5A) with acute angles. The first transistor has a first current path (506) oriented in a first crystal direction (520). A first control gate (362) overlies the first channel. A second transistor (222) is connected to the first transistor and has a second channel in the substantial shape of a parallelogram with acute angles. The second transistor has a second current path (502) oriented parallel to the first current path. A second control gate (360) overlies the second channel.

REFERENCES:
patent: 7102166 (2006-09-01), Bryant et al.
Sayama et al., “Effect of <100> Channel Direction for High Performance SCE Immune pMOSFET with Less Than 0.15μm Gate Length,” IEDM 99-657 27.5.1 (1999).
2005 IMEC Channel engineering report (http://www.imec.be/wwwinter/mediacenter/en/SR2005/html/142274.html).

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