Coherent light generators – Particular active media – Semiconductor
Patent
1991-12-03
1993-08-24
Epps, Georgia Y.
Coherent light generators
Particular active media
Semiconductor
372 46, 372 48, 372 49, 257 13, H01S 319
Patent
active
052395502
ABSTRACT:
A transistor laser has a semiconductor collector with a semiconductor substrate and n semiconductor layers thereon, and the substrate is formed of material compatible with the semiconductor layers. Disposed on the collector is a semiconductor base comprising a p layer, and superposed on it is an emitter formed of n semiconductor layers extending the full length of the base and of lesser width than the base. An emitter contact is provided on the outer layer of the emitter, and a base contact is provided on the semiconductor base spaced from the emitter, and a collector contact is provided on the surface of the collector. When potentials are applied between the collector contact and the emitter contact and between the emitter contact and the base contact, a laser beam is generated in the semiconductor base. The assembly may include reflecting dielectric mirrors on the substrate and in the emitter to confine the lasing therebetween. The emitter may include a multiplicity of resonant tunneling layers, and positive distributed feedback may be provided by periodic corrugation on at least one side of the base. The base may be chemically constituted as a strained multiple quantum well layer, or comprised of a series of layers providing multiple quantum wells.
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T. Futatsugi, Y. Yamaguchi, S. Muto, N. Yokoyama, A. Shibatomi, "Resonant Tunneling Bipolar Transistors Using InAlAs/InGaAs Heterostructures", J. Appl. Phys., 65, 1771-1775 (Feb. 1989).
M. A. Read, W. R. Frensley, R. J. Matyi, J. N. Randall, A. C. Seabaugh "Realization of a Three-Terminal Resonant Tunneling Device: The Bipolar Quantum Resonant Tunneling Transistor", Appl. Phys. Lett. 54 pp. 1034-1037, (Mar. 1989).
Epps Georgia Y.
University of Connecticut
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