Transistor having voltage-controlled thermionic emission

Details Transistor having voltage-controlled thermionic emission Transistor having voltage-controlled thermionic emission

1983-06-30

1989-05-09

Larkins, William D.

357 42, H01L 2978

Patent

active

048293490

ABSTRACT:
A transistor device using an interdigitated gate and electrode surface structure to control thermionic emission over a potential barrier is described. Complementary logic structures comprising such transistors are discussed.

REFERENCES:
patent: 4149174 (1979-04-01), Shannon
patent: 4317127 (1982-02-01), Nishizawa
patent: 4410902 (1983-10-01), Malik
C. O. Bozler et al., "Fabrication and Numerical Simulation of the Permeable Base Transistor," IEEE Transactions on Electron Devices, vol. ED-27, No. 6, Jun., 1980, pp. 1128-1141.
J. Nishizawa et al., "Field-Effect Transistor Versus Analog Transistor (Static Induction Transistor)," IEEE Transactions on Electron Devices, vol. ED-22, No. 4, Apr., 1975, pp. 185-197.

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