Patent
1987-11-18
1988-11-01
James, Andrew J.
357 36, 357 46, 357 51, H01L 2972, H01L 2908, H01L 2952
Patent
active
047823780
ABSTRACT:
A resistively stabilized transistor in which secondary breakdown is prevented by the insertion of a floating emitter protection region around only one end of a stabilizing resistive region. The transistor includes an ordinary emitter region located within a base region. A floating emitter region surrounds the ordinary emitter region. An elongated stabilizing resistive region has one end connected to the ordinary emitter region and the other to the base region. The protection region is positioned around, but spaced from, an end portion of the stabilizing resistive region only in the area where the resistive region connects to the ordinary emitter region.
REFERENCES:
patent: 3597640 (1971-08-01), Kubinec
Hamilton & Howard, "Basic Integrated Circuit Engineering", copyright 1975, p. 7.
Ito Shin'ichi
Sekiya Tsuneto
Shigekane Hisao
Fuji Electric & Co., Ltd.
James Andrew J.
Lamont John
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