Transistor having integrated protection

Details Transistor having integrated protection Transistor having integrated protection

1975-12-15

1977-04-12

James, Andrew J.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

357 34, 357 37, 357 48, 307303, H01L 2990, H01L 2972, H01L 2900, H01L 2704

Patent

active

040178820

ABSTRACT:
An integrated transistor device has reverse bias breakdown protection for both the base-collector PN junction and the base-emitter PN junction. The base-emitter PN junction is protected by means of a diode effectively in parallel relation therewith, and the base-collector PN junction is protected by means of a protective region which provides a punch-through mode of operation.

REFERENCES:
patent: 3633052 (1972-01-01), Hanna
patent: 3677838 (1972-07-01), Brebisson
patent: 3758831 (1973-09-01), Clark
patent: 3881179 (1975-04-01), Howard
patent: 3921199 (1975-11-01), Yuan et al.
patent: 3936863 (1976-02-01), Olmstead

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