Transistor having improved junction breakdown protection integra

Details Transistor having improved junction breakdown protection integra Transistor having improved junction breakdown protection integra

1977-01-10

1978-01-31

Miller, Jr., Stanley D.

357 34, 357 52, 357 89, 357 90, H01L 2990

Patent

active

040718522

ABSTRACT:
An improved integrated transistor device has reverse bias breakdown protection for the base-collector junction. The base-collector junction is protected by means of a diode region providing a punchthrough protective mode of operation. The configuration disclosed provides a device which has comparatively stable and relatively high energy junctions therein.

REFERENCES:
patent: 3338758 (1967-08-01), Tremere
patent: 3551760 (1970-12-01), Tokuyama et al.
patent: 3714526 (1973-01-01), Low et al.
R. Warner et al., "Integrated Circuits-Design Principles and Fabrication," McGraw-Hill Book Co., .COPYRGT. 1965, pp. 65-67.

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