Transistor having field plate

Details Transistor having field plate Transistor having field plate

2006-11-07

2010-02-16

Chaudhari, Chandra (Department: 2891)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Field plate electrode

C438S579000, C257SE21407

Reexamination Certificate

active

07662698

ABSTRACT:
A method for forming a transistor device having a field plate. The method includes forming a structure having a source, a drain, and a Tee gate. A photo-resist layer is formed on the structure with an opening therein only the one of two distal ends of the Tee gate. A metal is deposited over the photo-resist layer with portions of the metal being disposed on the photo-resist layer and with other portions of the metal passing through the opening onto the exposed portions of the dielectric layer and with distal end of the top of the Tee gate preventing such metal from being deposited onto portions of the dielectric layer disposed under it. The photo-resist layer is removed along with the portions of the metal deposited thereon while leaving portions of the metal from regions of the dielectric layer exposed by the opening to form the field gate.

REFERENCES:
patent: 4062747 (1977-12-01), Chang et al.
patent: 4068134 (1978-01-01), Tobey, Jr. et al.
patent: 4127932 (1978-12-01), Hartman et al.
patent: 4170818 (1979-10-01), Tobey, Jr. et al.
patent: 4172260 (1979-10-01), Okabe et al.
patent: 4498225 (1985-02-01), Gutierrez et al.
patent: 4575924 (1986-03-01), Reed et al.
patent: 4581621 (1986-04-01), Reed
patent: 4600853 (1986-07-01), Whitlock et al.
patent: 4611140 (1986-09-01), Whitlock et al.
patent: 4635083 (1987-01-01), Cooper, Jr.
patent: 4641161 (1987-02-01), Kim et al.
patent: 4644221 (1987-02-01), Gutierrez et al.
patent: 4783427 (1988-11-01), Reed et al.
patent: 4799091 (1989-01-01), Reed
patent: 4821093 (1989-04-01), Iafrate et al.
patent: 4884001 (1989-11-01), Sacks et al.
patent: 4912531 (1990-03-01), Reed et al.
patent: 4926083 (1990-05-01), Merritt et al.
patent: 4969018 (1990-11-01), Reed
patent: 4980596 (1990-12-01), Sacks et al.
patent: 4980749 (1990-12-01), Ohtsuka et al.
patent: 4990814 (1991-02-01), Tanski et al.
patent: 4990977 (1991-02-01), Hack et al.
patent: 4996573 (1991-02-01), Hack et al.
patent: 5006483 (1991-04-01), Ohtsuka et al.
patent: 5009865 (1991-04-01), Boden et al.
patent: 5012301 (1991-04-01), Xu et al.
patent: 5027166 (1991-06-01), Ohtsuka et al.
patent: 5032877 (1991-07-01), Bate
patent: 5075740 (1991-12-01), Ohtsuka et al.
patent: 5075754 (1991-12-01), Shirai et al.
patent: 5081510 (1992-01-01), Ohtsuka et al.
patent: 5089862 (1992-02-01), Warner, Jr. et al.
patent: 5097227 (1992-03-01), Yuan et al.
patent: 5112774 (1992-05-01), Ohtsuka et al.
patent: 5148240 (1992-09-01), Ohtsuka et al.
patent: 5158909 (1992-10-01), Ohtsuka et al.
patent: 5177749 (1993-01-01), Shigihara et al.
patent: 5221638 (1993-06-01), Ohtsuka et al.
patent: 5252842 (1993-10-01), Buck et al.
patent: 5309004 (1994-05-01), Grudkowski
patent: 5320977 (1994-06-01), Tanski et al.
patent: 5399886 (1995-03-01), Hasegawa
patent: 5449925 (1995-09-01), Baliga et al.
patent: 5456945 (1995-10-01), McMillan et al.
patent: 5496779 (1996-03-01), Lee et al.
patent: 5540772 (1996-07-01), McMillan et al.
patent: 5541426 (1996-07-01), Abe et al.
patent: 5550089 (1996-08-01), Dutta et al.
patent: 5606195 (1997-02-01), Hooper et al.
patent: 5635412 (1997-06-01), Baliga et al.
patent: 5650014 (1997-07-01), Tauber
patent: 5821171 (1998-10-01), Hong et al.
patent: 5888583 (1999-03-01), McMillan et al.
patent: 5895260 (1999-04-01), Bhatnagar et al.
patent: 5937318 (1999-08-01), Warner, Jr. et al.
patent: 5956578 (1999-09-01), Weitzel et al.
patent: 5962883 (1999-10-01), Hong et al.
patent: 6118152 (2000-09-01), Yamaguchi et al.
patent: 6160290 (2000-12-01), Pendharkar et al.
patent: 6317360 (2001-11-01), Kanamori
patent: 6429032 (2002-08-01), Okuyama et al.
patent: 6468837 (2002-10-01), Pendharkar et al.
patent: 6483135 (2002-11-01), Mizuta et al.
patent: 6528848 (2003-03-01), Hoshino et al.
patent: 6535091 (2003-03-01), Bechtle et al.
patent: 6559513 (2003-05-01), Miller et al.
patent: 6586813 (2003-07-01), Nagahara
patent: 6603185 (2003-08-01), Jimbo et al.
patent: 6605842 (2003-08-01), Hoshino et al.
patent: 6611044 (2003-08-01), Pruijmboom et al.
patent: 6686611 (2004-02-01), Okuyama et al.
patent: 6690037 (2004-02-01), Desko et al.
patent: 6703678 (2004-03-01), Hirokawa et al.
patent: 6717192 (2004-04-01), Miyoshi
patent: 6740535 (2004-05-01), Singh et al.
patent: 6777278 (2004-08-01), Smith
patent: 6790753 (2004-09-01), Desko et al.
patent: 6797594 (2004-09-01), Hoshino et al.
patent: 6828645 (2004-12-01), Jimbo et al.
patent: 6867078 (2005-03-01), Green et al.
patent: 6894578 (2005-05-01), Kishimoto et al.
patent: 6900518 (2005-05-01), Udrea et al.
patent: 6927102 (2005-08-01), Udrea et al.
patent: 6939781 (2005-09-01), Redd et al.
patent: 6940285 (2005-09-01), Montrose et al.
patent: 6949797 (2005-09-01), Krumbein et al.
patent: 2005/0127398 (2005-06-01), Taniguchi et al.
patent: 2007/0132021 (2007-06-01), Kunii et al.
patent: 1 326 283 (2003-07-01), None
patent: 1 326 283 (2004-01-01), None
patent: WO 2005.114747 (2005-12-01), None
patent: WO 2005 114747 (2005-12-01), None
Notification of transmittal of the International Search Report dated Jul. 31, 2007, PCT/US2007/022217.
Written Opinion of the International Searching Authority, or the Declaration dated Jul. 31, 2007, PCT/US2007/022217.
Huili Xing, Y. Dora Chini, S. Heikman, S. Keller, U.K. Misra, High Breakdown Voltage AIGaN-GaN HEMTs Achieved by Multiple Field Plates, IEEE Electronic Device Letters, vol. 25, No. 4, Apr. 4, 2004.
Notification Concerning Transmittal of International Preliminary Report on Patentability (Chapter 1 of the Patent Cooperation Treaty), PCT/US2007/022217 dated May 22, 2009 and the Written Opinion of the International Searching Authority, 7 pages.
Cheng-Guan et al, “Production Ready Ultra High Breakdown 6 pHEMT Techmology” CS MANTECH Conf. Tech Digest Apr. 2005 pp. 27-30.
Haematsu et al. “Developmentof L-Band 28v Operation GaAs FET and Optimization for Mass Production” in CS MANTECHConf. Tech Digest Apr. 2005 pp. 39-42.
Cheng-Guan Yuan, Y.Y. Hiseh, T.J. Yeh, Chung-Hsu Chen, D.W. Tu, Yu—Chi Wang, Joe Lie, Saas Murad, Ramon Schook, Frans Boteko, and Mark Tomensen, Production Ready Ultra High Breakdown 6. pHEMT Technology, CS MANTECH Conference Technical Digest, Apr. 2005, pp. 27-30.
H. Haematsu, T. Igarashi, F. Yamaki, A. Nitta, K. Inoue, and H.Kawata, Development of L-band 28 V Operation GaAs FET and Optimization for Mass Production. CS MANTECH Conference Technical Digest, Apr. 2005, pp. 39-42.

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