Transistor having a nonuniform doping channel and method for fab

Details Transistor having a nonuniform doping channel and method for fab Transistor having a nonuniform doping channel and method for fab

1993-12-02

1994-12-27

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 44, 437 45, 437 59, 437203, H01L 21265

Patent

active

053765702

ABSTRACT:
An MOSFET having a nonuniform doping channel and a method for fabricating the same.
The MOS transistor having a nonuniform doping channel is comprised of: a gate oxide film formed on a semiconductor substrate provided with a trench; a gate electrode of some size formed on the gate oxide film atop the trench and surroundings, the gate electrode having a portion longer than any other than portion and thus, being asymmetrical with regard to the axis passing the center of the trench; a source region formed in a predetermined portion of the semiconductor substrate neighboring a short portion of the gate electrode; a high density channel region formed by doping impurities having the same type with the semiconductor substrate in a predetermined portion of the semiconductor substrate below a longer portion of the gate electrode; and a drain region formed in a predetermined portion of the semiconductor substrate neighboring the high density channel region.

REFERENCES:
patent: 4962054 (1990-10-01), Shimata
patent: 5071780 (1991-12-01), Tsai
patent: 5082794 (1992-01-01), Pfiester et al.
patent: 5132238 (1992-07-01), Mirakami et al.
patent: 5160491 (1992-11-01), Mori
patent: 5270257 (1993-12-01), Shin

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