Transistor having a channel with tensile strain and oriented...

Details Transistor having a channel with tensile strain and oriented... Transistor having a channel with tensile strain and oriented...

2010-06-23

2011-10-18

Potter, Roy K (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

With current flow along specified crystal axis

C257S627000, C257SE29004

Reexamination Certificate

active

08039878

ABSTRACT:
By appropriately orienting the channel length direction with respect to the crystallographic characteristics of the silicon layer, the stress-inducing effects of strained silicon/carbon material may be significantly enhanced compared to conventional techniques. In one illustrative embodiment, the channel may be oriented along the <100> direction for a (100) surface orientation, thereby providing an electron mobility increase of approximately a factor of four.

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