Transistor gate drive circuit providing dielectric isolation and

Details Transistor gate drive circuit providing dielectric isolation and Transistor gate drive circuit providing dielectric isolation and

1995-11-17

1997-09-02

Callahan, Timothy P.

Miscellaneous active electrical nonlinear devices, circuits, and

Gating

Accelerating switching

327108, 327377, 327432, H03K 1704

Patent

active

056636725

ABSTRACT:
A gate drive circuit for a power transistor provides improved dielectric isolation and protection against inadvertent turn ON of the power transistor. The gate drive circuit includes a first circuit means for providing a bias power signal and a trigger pulse signal to a second circuit means in response to a control signal from an external control circuit connected to said first circuit means. The bias power signal and the trigger pulse signal are coupled from the first circuit means to the second circuit means by magnetic induction through a first and a second coupling transformer, respectively, with the first and second coupling transformers thereby providing separate pathways for coupling of the bias power signal and the trigger pulse signal between the first and second circuit means. The first and second coupling transformers further provide dielectric isolation between the first and second circuit means along each of the separate pathways.

REFERENCES:
patent: 3581110 (1971-05-01), Belcastro
patent: 4017743 (1977-04-01), Hartman
patent: 4339671 (1982-07-01), Park et al.
patent: 4551635 (1985-11-01), Kuroki
patent: 4605865 (1986-08-01), Yuzurihara
patent: 4694206 (1987-09-01), Weinberg
patent: 4709161 (1987-11-01), Mizohata et al.
patent: 4748351 (1988-05-01), Barzegar
patent: 5019719 (1991-05-01), King
patent: 5214315 (1993-05-01), Dunnam
patent: 5530385 (1996-06-01), Miettinen

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