Transistor fabrication of a twin tub using angled implant

Details Transistor fabrication of a twin tub using angled implant Transistor fabrication of a twin tub using angled implant

1993-10-13

1995-05-02

Thomas, Tom

Fishing, trapping, and vermin destroying

437 35, 148DIG70, H01L 21266

Patent

active

054118999

ABSTRACT:
A method for forming a twin tub semiconductor integrated circuit is disclosed. A portion of a semiconductor substrate is masked by oxide, nitride and photoresist. P-type dopant is directed towards the other portion of the substrate. Subsequently, the photoresist is removed and a protective oxide is grown over the p-tub, thereby driving the dopant into the substrate. Next, an n-type ion implantation is performed to create the n-tub. The n-type ions are directed at the substrate at an angle which is away from normal incidence. The angular direction of the n-type dopants permits the use of smaller screen oxides over the n-tub and smaller protective oxides over the already-formed p-tub. When all of the protective oxides have been removed, the inventive technique provides a twin tub substrate having a comparatively smooth upper surface.

REFERENCES:
patent: 4931406 (1990-06-01), Tomioka
patent: 5225365 (1993-07-01), Cosentino
patent: 5296401 (1994-03-01), Mitsui et al.
patent: 5300797 (1994-04-01), Bryant et al.
Wolf et al., "Silicon Processing for the VLSI Era, vol. 1-Process Technology", pp. 321-323, 1986.
"High Carrier Velocity and Reliability of Quarter-Micron SPI (Self-aligned Pocket Implantation) MOSFETs," Atsushi Hori et al., Semiconductor Research Center, Matsushita Elec. Ind. Co., Osaka, Japan, pp. 28.3.1-28.3.4, IEDM-92.

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