Transistor epitaxial wafer and transistor produced by using...

Details Transistor epitaxial wafer and transistor produced by using... Transistor epitaxial wafer and transistor produced by using...

2006-12-12

2009-02-03

Hoang, Quoc D (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

With pn junction isolation

C438S235000, C257SE29033

Reexamination Certificate

active

07485946

ABSTRACT:
A transistor epitaxial wafer having: a substrate; an n-type collector layer, a p-type base layer and an n-type emitter layer formed on the substrate in this order; and an n-type InGaAs non-alloy layer having an n-type InGaAs nonuniform composition layer formed on the n-type emitter layer and having an nonuniform indium (In) composition, and an n-type InGaAs uniform composition layer formed on the n-type InGaAs nonuniform composition layer and having a uniform indium (In) composition. The n-type InGaAs nonuniform composition layer has a first layer doped with Si and having a low indium (In) composition, and a second layer formed on the first layer, doped with an n-type dopant except Si, and having an indium (In) composition higher than the first layer.

REFERENCES:
patent: 7148557 (2006-12-01), Yanagihara et al.
patent: 2003-133325 (2003-05-01), None

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