Transistor emitter having alternating undoped and doped layers

Details Transistor emitter having alternating undoped and doped layers Transistor emitter having alternating undoped and doped layers

2006-07-18

2006-07-18

Nguyen, Tuan H. (Department: 2813)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Bipolar transistor

C257S591000

Reexamination Certificate

active

07078744

ABSTRACT:
A disclosed embodiment is a method for fabricating an emitter structure, comprising a step of conformally depositing an undoped polysilicon layer in an emitter window opening and over a base. Next, a doped polysilicon layer is non-conformally deposited over the undoped layer. Thereafter, the steps of conformally depositing an undoped polysilicon layer and non-conformally depositing a doped polysilicon layer are repeated until the emitter window opening is filled. The method can further comprise a step of activating dopants. In another embodiment, an emitter structure is fabricated according to the above method.

REFERENCES:
patent: 6462397 (2002-10-01), Ryum et al.
patent: 6818520 (2004-11-01), Schuegraf

Affiliated with

Also associated with

Rating

Transistor emitter having alternating undoped and doped layers does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Transistor emitter having alternating undoped and doped layers, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Transistor emitter having alternating undoped and doped layers will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3577700